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kw.\*:("Cadmium arsenides")

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Results 1 to 25 of 146

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Van der Pauw resistivity measurements on evaporated thin films of cadmium arsenide, Cd3As2DIN, M; GOULD, R. D.Applied surface science. 2006, Vol 252, Num 15, pp 5508-5511, issn 0169-4332, 4 p.Conference Paper

Système CdP2-CdAs2MARENKIN, S. F; MAKSIMOVA, S. I; PASHKOVA, O. N et al.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 11, pp 2936-2938, issn 0044-457XArticle

Interaction dans le système Cd3As2-GaAsMARENKIN, S. F; PASHKOVA, O. N; LAZAREV, V. B et al.Žurnal neorganičeskoj himii. 1986, Vol 31, Num 5, pp 1271-1273, issn 0044-457XArticle

ETUDE STRUCTURALE DES COMPOSES CD3YX3 (Y=AS, P; X=CL, BR, I)REBBAH A; YAZBECK J; DESCHANVRES H et al.1981; REV. CHIM. MINER.; ISSN 0035-1032; FRA; DA. 1981; VOL. 18; NO 1; PP. 43-53; ABS. ENG; BIBL. 6 REF.Article

Caractère de l'interaction des composants du système CdAs2-CdBr2OLEKSEYUK, I. D; GASINETS, S. M; GAM, N. S et al.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 9, pp 2362-2367, issn 0044-457XArticle

Photoluminescence and infrared transmission spectroscopies of CdGeAs2AUFGANG, J. B; LABRIE, D; OLSON, K et al.Semiconductor science and technology. 1997, Vol 12, Num 10, pp 1257-1264, issn 0268-1242Article

Acoustooptic and elastic properties of cadmium-arsenic glassesPETRUSHOVA, O. V; MEL'NICHENKO, T. N.Inorganic materials. 1997, Vol 33, Num 3, pp 226-229, issn 0020-1685Article

Birefringence and optical activity of cadmium diarsenide single crystalsMARENKIN, S. F; RAUKHMAN, A. M; MATIYUK, I. N et al.Optics and spectroscopy. 1993, Vol 75, Num 1, pp 66-68, issn 0030-400XArticle

Magnetic susceptibility and peculiarity of chemical bond in the Cd-P(As) system compoundsVITKINA, T. Z; SHELEG, A. U.Crystal research and technology (1979). 1998, Vol 33, Num 2, pp 303-308, issn 0232-1300Article

Urbach rule used to explain the variation of the absorption edge in CdGeAs2 crystalsLIHUA BAI; CHUNCHUAN XU; SCHUNEMANN, P. G et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 3, pp 549-558, issn 0953-8984, 10 p.Article

Model of lattice dynamics of Cd3As2 single crystalsWESZKA, J.Physica status solidi. B. Basic research. 1999, Vol 211, Num 2, pp 605-619, issn 0370-1972Article

Improved NLO crystals for mid-IR laser applicationsSCHUNEMANN, Peter G.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64550R.1-64550R.7, issn 0277-786X, isbn 978-0-8194-6568-9, 1VolConference Paper

Effect of free carriers on electron mass and infrared absorption in n-type CdGeAs2CHUNCHUAN XU; BAIL, Lihua; GILES, N. C et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 9, pp 2741-2747, issn 0953-8984, 7 p.Article

Photoluminescence of n-type CdGeAs2LIHUA BAI; CHUNCHUAN XU; NAGASHIO, K et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 37, pp 5687-5696, issn 0953-8984, 10 p.Article

Distribution of electronic states in amorphous Cd-As thin films on the basis of optical measurementsJARZABEK, B; WESZKA, J; CISOWSKI, J et al.Journal of non-crystalline solids. 2004, Vol 333, Num 2, pp 206-211, issn 0022-3093, 6 p.Article

Defect segregation in CdGeAs2SCHUNEMANN, Peter G; SETZLER, Scott D; POLLAK, Thomas M et al.Journal of crystal growth. 2001, Vol 225, Num 2-4, pp 440-444, issn 0022-0248Conference Paper

Elastic properties of several amorphous solids and disordered crystals below 100 KTOPP, K. A; CAHILL, D. G.Zeitschrift für Physik. B, Condensed matter. 1996, Vol 101, Num 2, pp 235-245, issn 0722-3277Article

Growth and microhardness studies of CdGeAs2 single crystalsMANIMARAN, M; RAMASAMY, P.Journal of materials science letters. 1994, Vol 13, Num 23, pp 1729-1730, issn 0261-8028Article

Isostructural Cd3E2 (E = P, As) microcrystals prepared via a hydrothermal routeSHUO WEI; JUN LU; WEICHAO YU et al.Crystal growth & design. 2006, Vol 6, Num 4, pp 849-853, issn 1528-7483, 5 p.Article

Synthesis and optical properties of ZnAs2 and CdAs2 crystals and filmsMARENKIN, S. F; MOROZOVA, V. A.Inorganic materials. 1999, Vol 35, Num 10, pp 1010-1021, issn 0020-1685Article

Effect of in-diffused copper on the electrical properties of CdSnAs2DAUNOV, M. I; DANILOV, V. I; MAGOMEDOV, A. B et al.Inorganic materials. 1998, Vol 34, Num 6, pp 523-528, issn 0020-1685Article

A theoretical study of native acceptors in CdGeAs2PANDEY, R; OHMER, M. C; GALE, J. D et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 25, pp 5525-5533, issn 0953-8984Article

Growth of CdAs2 single crystals by directional solidification in Bridgman geometryMARENKIN, S. F; RAUKHMAN, A. M; MAIMASOV, A. B et al.Inorganic materials. 1997, Vol 33, Num 12, pp 1220-1226, issn 0020-1685Article

Influence of cluster structure on the thermal stability of amorphous CdGeAs2(Ni) films and doping effectivenessOKUNEV, V. D.Inorganic materials. 1997, Vol 33, Num 11, pp 1106-1112, issn 0020-1685Article

Transmission electron microscopy of Cd3As2 and eutectoid Cd3As2-As crystalsTAJABOR, N; FENG, C. N; LOVETT, D. R et al.Journal of materials science letters. 1997, Vol 16, Num 24, pp 1970-1973, issn 0261-8028Article

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